THERMAL EVAPORATION was used to create pure CdS thin films, which were then analyzed using XRD and UV-VIS spectroscopy. With changes in thickness, it was discovered that the particle size decreased from 23.6 nm to 21.7 nm. From the XRD data, the impact of thickness on strain and dislocation has been estimated. To determine how optical characteristics changed as thickness changed, transmission data were examined in the 200–1100 nm spectral range. Additionally, it was found that as thickness increased, between 2.444 and 2.401 eV, the band gap decreased.

This research describes the thermopower and electric conductivity of CdTe films produced using THERMAL EVAPORATION technology; the energy activation value of this electrical and thermoelectrically properties are estimated. CdTe sheets have an electrical resistance of about (107. cm). Conductivity was studied, and it was found that the electrical conductivity increased with temperature. At low temperatures, there are two values of activation energy $(Ea1=0.337 eV)$ because of this dependence, but at high temperatures, $(Ea2 = 0.702 eV)$ is the only value of activation energy. The Seebeck coefficient (thermopower) was researched to find that it was temperature-dependent, and it was found that, as the temperature increased, the Seebeck coefficient decreased. The experiment results on thermoelectric power were summarized in a two-paragraph statement. The activation energy was measured to be $(ES = 0.561 eV)$, and the CdTe film was shown to be p-type conductive.

The nanocrystalline ZnS semiconducting thin films of 500 nm thickness have been deposited on glass substrate at different substrate temperatures (Ts) by THERMAL EVAPORATION technique. The structural property of deposited thin films has been measured by X-ray diffraction, scanning electron microscopy, and Energy dispersive analysis of X-ray. The electrical and optical properties of thin films have been determined by D.C. two point probe and ultraviolet visible spectroscopy measurements. The X-ray diffraction patterns show that thin films have cubic structure. The electrical resistivity of thin films has decreased from 0.36´106 to 0.15´106 W cm as substrate temperature increases from 300 to 400 K. It shows that films have semiconducting in nature. The grain size and electrical conductivity of the thin films have increased as the deposition temperature increased while dislocation density, activation energy, and band gap decreased. The minimum band gap 3.43eV has been found.